Atomically-thin transistors made by 2D semiconducting materials possess attractive electronic properties and have been seen as building blocks for next-generation semiconductor chips. This project aims to study the transport properties of 2D field-effect transistors, including carrier mobility and contact resistance. In particular, we will focus on optimising the metal-semiconductor junction. In other words, we will develop high-performance 2D transistors by achieving Ohmic contacts to metals, paving ways to use these materials in new low-energy dissipation devices.
This project will involve fabricating atomically-thin 2D semiconductors with the state-of-the-art equipment in a cleanroom, performing the electrical measurements, and analysing and interpreting the data.
Supervisor: Prof. Michael Fuhrer and Yi-Hsun Chen
See https://www.monash.edu/science/schools/physics/honours/honours-project to apply.