Topological insulators (TIs) possess conductive surface states and insulating bulk properties. However, their limited operating temperatures hinder their practical implementation in everyday electronic devices. To tackle this challenge, we explore the potential of disordered TIs, which exhibit enhanced stability and increased defect tolerance. Here, we employed molecular beam epitaxy (MBE) and ion irradiation techniques at ANSTO to synthesize thin films of SnTe and Cr-doped SnTe. Subsequently, we probe their electronic and magnetic properties using several techniques.
The doping of TIs with magnetic elements typically introduces complications related to alterations in surface chemistry and lattice structure. However, this research sheds light on the intriguing interplay between disorder and magnetism in TIs. Here we demonstrate our approach by irradiating SnTe thin films with Cr ions, which not only introduces magnetism but also induces disorder in SnTe. By exploring the potential of amorphous/disordered TIs, this project aims to overcome the limitations associated with crystalline TIs.
About the presenter
Golrokh Akhgar is an AI at Monash working within FLEET’s Research Theme 1, Topological Materials.