The memristor, a resistor with memory retention capability, is a newly discovered circuit element that is useful for non-magnetic non-volatile memory and logic operations for traditional computation. Additionally, it emulates short- and long-term plasticity of biological synapses, making it an ideal component for unconventional ultrafast neuromorphic (brain-inspired) computing. An ultrathin low-power memristor can be a strong candidate for replacing today’s silicon-based transistors that have almost reached performance limit in terms of miniaturization, energy-efficiency, and cost-effectiveness.
In this project, you will fabricate an artificial synapse by sandwiching an ultrathin (2 nm) Ga2O3 sheet, synthesized by novel touch-printing technique, between 2 layers of graphene, a single sheet of carbon. Synaptic behavior will be tested by electrical transport measurements. 1/f noise measurement techniques will be utilized for measuring signal-to-noise ratio, as well as for probing internal mechanism of memory effect in such a device. On the course of the project you will be trained in van der Waals stacking, liquid metal touch printing, cleanroom nanofabrication, and electrical transport measurements techniques.
This project will give you an opportunity to work with FLEET (ARC centre of excellence for future low-energy electronics technology) and avail top-up Honours scholarship.
Supervisors: Dr Semonti Bhattacharyya and Prof Michael Fuhrer
For any enquiries please contact semonti.bhattacharyya@monash.edu or michael.fuhrer@monash.edu.
See https://www.monash.edu/science/schools/physics/honours/honours-project to apply.