Using metal gates deposited in the wafer growth chamber reduces scattering from charge at the wafer surface, enhancing electron mobility and decreasing charge noise. This makes in situ grown gates ideal for a myriad of systems, from artificial lattices to quantum electronic devices such as quantum point contacts, quantum dots and quantum bits.
About the presenter
Yonatan Ashlea Alava is a Diversity in FLEET Research Fellow at UNSW with CI Alex Hamilton. His research specialises in fabrication of artificial graphene in GAAs 2D quantum systems, working within FLEET’s Research Theme 1, Topological Materials.