Cheng Tan, RMIT
We report on two recent studies regarding the use of the solid proton gate technique to modulate carrier density in metallic materials, specifically focusing on proton intercalation induced phase transitions. The first study investigated the superconductor to insulator transition in the Kagome metal CsV3Sb5, while the second study realized the room temperature magnetic phase transition from a ferromagnetic state to an antiferromagnetic state in Cr1.2Te2.
Our findings suggest that the solid proton gate technique is a highly efficient method for inducing and controlling phase transitions in metallic materials, with potential applications in a wide range of fields, including electronics and spintronics.
About the presenter
Cheng Tan is currently working as a postdoctoral researcher working on a FLEET industry project He recently finished his PhD, working with Prof Lan Wang (RMIT) to study Van der Waals (vdW) magnetic materials and heterostructures for their potential in quantum anomalous Hall effect (QAHE) devices within FLEET’s Research theme 1 and Enabling technology B. In such devices, electron transport can occur without scattering and without an applied magnetic field or ultra-low temperature, making them ideal candidates for future low-energy electronics.